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Polycrystalline p+-SixGe1-x as a Single Gate in CMOS Technology
1999 (English)In: Physica Scripta T, Vol. 79, 225-227 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1999. Vol. 79, 225-227 p.
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Other Electrical Engineering, Electronic Engineering, Information Engineering
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URN: urn:nbn:se:kth:diva-80985OAI: oai:DiVA.org:kth-80985DiVA: diva2:497113
Note
NR 20140805Available from: 2012-02-10 Created: 2012-02-10 Last updated: 2012-02-10Bibliographically approved

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Other Electrical Engineering, Electronic Engineering, Information Engineering

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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  • Other style
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Language
  • de-DE
  • en-GB
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