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Epitaxial growth of Sn on Si(111): A direct atomic-structure determination of the (2 √3 ×2 √3) R30° reconstructed surface
KTH, Superseded Departments, Physics.
1991 (English)In: Physical Review B, ISSN 01631829 (ISSN), Vol. 44, no 23, 13144-13147 p.Article in journal (Refereed) Published
Abstract [en]

Scanning tunneling microscopy (STM) has been used to determine the surface atomic structure of Si(111)(23 ×2 3) -Sn. The topographic images show four resolved atoms in each (2 3 ×2 3) unit cell, and the structure is found to be onefold symmetric. Together with coverage measurements, the STM analysis implies that the reconstructed surface is an epitaxial Sn two-layer structure, where the atoms adopt a bonding configuration characteristic of -Sn. A three-dimensional structure model, in accordance with the obtained results, is proposed. © 1991 The American Physical Society.

Place, publisher, year, edition, pages
1991. Vol. 44, no 23, 13144-13147 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-83050DOI: 10.1103/PhysRevB.44.13144OAI: oai:DiVA.org:kth-83050DiVA: diva2:498684
Note
Correspondence Address: Törnevik, C.; Department of Physics, Materials Science, Royal Institute of Technology, S-100 44 Stockholm, Sweden NR 20140805Available from: 2012-02-12 Created: 2012-02-12 Last updated: 2012-02-12Bibliographically approved

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