Epitaxial growth of Sn on Si(111): A direct atomic-structure determination of the (2 â3 Ã2 â3) R30Â° reconstructed surface
1991 (English)In: Physical Review B, ISSN 01631829 (ISSN), Vol. 44, no 23, 13144-13147 p.Article in journal (Refereed) Published
Scanning tunneling microscopy (STM) has been used to determine the surface atomic structure of Si(111)(23 Ã—2 3) -Sn. The topographic images show four resolved atoms in each (2 3 Ã—2 3) unit cell, and the structure is found to be onefold symmetric. Together with coverage measurements, the STM analysis implies that the reconstructed surface is an epitaxial Sn two-layer structure, where the atoms adopt a bonding configuration characteristic of -Sn. A three-dimensional structure model, in accordance with the obtained results, is proposed. Â© 1991 The American Physical Society.
Place, publisher, year, edition, pages
1991. Vol. 44, no 23, 13144-13147 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83050DOI: 10.1103/PhysRevB.44.13144OAI: oai:DiVA.org:kth-83050DiVA: diva2:498684
Correspondence Address: TÃ¶rnevik, C.; Department of Physics, Materials Science, Royal Institute of Technology, S-100 44 Stockholm, Sweden NR 201408052012-02-122012-02-122012-02-12Bibliographically approved