Sn-induced surface reconstructions on the Ge(111) surface studied with scanning tunneling microscopy
1992 (English)In: Surface Science, ISSN 00396028 (ISSN), Vol. 271, no 3, L357-L361 p.Article in journal (Refereed) Published
Scanning tunneling microscopy (STM) has been used to study different Sn induced reconstructions on the Ge(111) surface; namely the (7 Ã— 7), (5 Ã— 5) and ( 3 Ã— 3) R30Â° structures. The first two have been confirmed to be of the dimer adatom stacking faults (DAS) type with adatoms mainly being Sn. The ( 3 Ã— 3)R30Â° superstructure was found at different Sn depositions. At 0.4 monolayer (ML) Sn coverage a homogeneous Sn adatom layer is adsorbed on the(1 Ã— 1) surface in threefold sites directly over second-layer atoms (T4), while at low coverage, 0.1 ML, the top layer is a mixture of Sn and Ge atoms. We also propose the chemical identities of the different atoms seen in the STM images as related to their apparent height. Â© 1992.
Place, publisher, year, edition, pages
1992. Vol. 271, no 3, L357-L361 p.
Adsorption--Microscopic Examination, Surfaces--Phase Transitions, Tin and Alloys--Adsorption, Adsorbate-Induced Surface Reconstructions, Dimer Adatom Stacking Faults, Scanning Tunneling Microscopy, Semiconducting Tin Deposition, Single Crystal Germanium Surfaces, Semiconducting Germanium
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-83049OAI: oai:DiVA.org:kth-83049DiVA: diva2:498696
Correspondence Address: GÃ¶thelid, M.; Department of Physics, Materials Science, Royal Institute of Technology, S-10044 Stockholm, Sweden NR 201408052012-02-122012-02-122012-02-12Bibliographically approved