Resonant photoelectron spectroscopy on NiO
1996 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 53, no 15, 10372-10376 p.Article in journal (Refereed) Published
Resonant photoelectron spectroscopy studies have been performed on the NiO valence band at photon energies corresponding to the Ni 2p, 3p, and O 1s absorption thresholds. Strong resonances are seen in the vicinity of the Ni 2P threshold, which confirm earlier conclusions from the weaker resonances seen at the Ni 3p threshold. No valence-band resonance is observed at the O 1s threshold. The analysis of this data confirms the picture of NiO as a strongly correlated charge-transfer insulator by identifying the highest-lying states as being of mainly 3d(8)L final-state character. The existence of localized excited Ni states, as well as the delocalized nature of the O states, are confirmed. Comparisons with the configuration-interaction model and quasiparticle calculations are also made.
Place, publisher, year, edition, pages
1996. Vol. 53, no 15, 10372-10376 p.
IdentifiersURN: urn:nbn:se:kth:diva-84194DOI: 10.1103/PhysRevB.53.10372ISI: A1996UJ29600125OAI: oai:DiVA.org:kth-84194DiVA: diva2:499194
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved