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Resonant photoelectron spectroscopy on NiO
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1996 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 53, no 15, 10372-10376 p.Article in journal (Refereed) Published
Abstract [en]

Resonant photoelectron spectroscopy studies have been performed on the NiO valence band at photon energies corresponding to the Ni 2p, 3p, and O 1s absorption thresholds. Strong resonances are seen in the vicinity of the Ni 2P threshold, which confirm earlier conclusions from the weaker resonances seen at the Ni 3p threshold. No valence-band resonance is observed at the O 1s threshold. The analysis of this data confirms the picture of NiO as a strongly correlated charge-transfer insulator by identifying the highest-lying states as being of mainly 3d(8)L final-state character. The existence of localized excited Ni states, as well as the delocalized nature of the O states, are confirmed. Comparisons with the configuration-interaction model and quasiparticle calculations are also made.

Place, publisher, year, edition, pages
1996. Vol. 53, no 15, 10372-10376 p.
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Natural Sciences
URN: urn:nbn:se:kth:diva-84194DOI: 10.1103/PhysRevB.53.10372ISI: A1996UJ29600125OAI: diva2:499194
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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