EPITAXIAL SILICIDE FORMATION IN THE MG/SI(111) SYSTEM
1993 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 289, no 3, 290-296 p.Article in journal (Refereed) Published
The silicide formation has been studied in the Mg/Si(111) system by IOW energy electron diffraction (LEED) and photoelectron spectroscopy. It has been found that an epitaxial Mg2Si silicide is responsible for the (2/3 square-root e x 2/3 square-root 3)R30-degrees reconstruction in this system. The thickness of the silicide is limited due to the very low formation temperature for this silicide. The Fermi level is positioned 0.59 +/- 0.06 eV above the valence band maximum in the Si substrate and the valence band maximum in the epitaxial silicide is positioned 0.3 +/- 0.1 eV below the Fermi level.
Place, publisher, year, edition, pages
1993. Vol. 289, no 3, 290-296 p.
IdentifiersURN: urn:nbn:se:kth:diva-84195DOI: 10.1016/0039-6028(93)90661-3ISI: A1993LF07200013OAI: oai:DiVA.org:kth-84195DiVA: diva2:499207
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved