Highly oriented alpha-alumina films grown by pulsed laser deposition
1997 (English)In: Thin Solid Films, ISSN 0040-6090, E-ISSN 1879-2731, Vol. 305, no 1-2, 243-247 p.Article in journal (Refereed) Published
Highly oriented thin films of alpha-alumina have been grown by pulsed laser deposition on Si(lll). The influence of the substrate temperature on the film growth was studied by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (MID). Ablation at temperatures between room temperature and 850 degrees C gave rise to incorporated crystalline aluminium (Al), while the stoichiometric and highly oriented alpha-Al2O3 films were obtained only at 850 degrees C. The XRD rocking curve measurements of the ablated films showed the full-width-at-half-maximum (FWHM) Of 0.2 degrees. Further annealing at 1000 degrees C in air for 26 h slightly improved out-of-plane orientation. (C) 1997 Elsevier Science S.A.
Place, publisher, year, edition, pages
1997. Vol. 305, no 1-2, 243-247 p.
Engineering and Technology
IdentifiersURN: urn:nbn:se:kth:diva-84206DOI: 10.1016/S0040-6090(97)00151-XISI: A1997XX86400031OAI: oai:DiVA.org:kth-84206DiVA: diva2:499209
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved