Change search
ReferencesLink to record
Permanent link

Direct link
Charge accumulation at InAs surfaces
Show others and affiliations
1996 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 76, no 19, 3626-3629 p.Article in journal (Refereed) Published
Abstract [en]

Angle-resolved photoelectron spectroscopy has been used to directly prove the existence of a charge accumulation layer at clean InAs surfaces. The formation of an accumulation layer is shown to be a common property of polar InAs surfaces, with the precise surface Fermi level position above the conduction band minimum determined by the surface geometry. The emission from states in the accumulation layer is studied with respect to its photon energy and angular dependence.

Place, publisher, year, edition, pages
1996. Vol. 76, no 19, 3626-3629 p.
National Category
Natural Sciences
URN: urn:nbn:se:kth:diva-84165DOI: 10.1103/PhysRevLett.76.3626ISI: A1996UW49000040OAI: diva2:499218
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text
In the same journal
Physical Review Letters
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 15 hits
ReferencesLink to record
Permanent link

Direct link