ADSORPTION OF SN ON SI(111)7X7 - RECONSTRUCTIONS IN THE MONOLAYER REGIME
1994 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 314, no 2, 179-187 p.Article in journal (Refereed) Published
Different monolayer phases of Sn on Si(111)7 x 7 have been studied by means of scanning tunneling microscopy (STM), core-level photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS). The STM results show that square-root 3 x square-root 3 reconstructions are obtained for room-temperature deposition of 1/3 ML of Sn followed by sample annealing in a broad temperature range. A T4 Sn adatom square-root 3 x square-root 3 phase is formed for temperatures between 500 and 800-degrees-C, with a concentration of defects that is strongly dependent on the temperature and which is as high as 25% for the lowest temperatures. Above 825-degrees-C a second square-root 3 x square-root 3 adatom reconstruction is formed, a mosaic-like phase with a 1: 1 mixture of Si and Sn atoms in T4 positions. The results from investigations of the higher coverage 2 square-root 3 x 2 square-root 3 reconstruction by XPS and RBS support the theory that this phase is a two-layer epitaxial Sn structure with all Si(111) dangling bonds saturated. The Sn coverage for this phase was determined to be between 1 and 1.2 ML.
Place, publisher, year, edition, pages
1994. Vol. 314, no 2, 179-187 p.
IdentifiersURN: urn:nbn:se:kth:diva-84175DOI: 10.1016/0039-6028(94)90005-1ISI: A1994NY16200005OAI: oai:DiVA.org:kth-84175DiVA: diva2:499249
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved