Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
ADSORPTION OF SN ON SI(111)7X7 - RECONSTRUCTIONS IN THE MONOLAYER REGIME
KTH, School of Information and Communication Technology (ICT). (materialfysik)
Show others and affiliations
1994 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 314, no 2, 179-187 p.Article in journal (Refereed) Published
Abstract [en]

Different monolayer phases of Sn on Si(111)7 x 7 have been studied by means of scanning tunneling microscopy (STM), core-level photoelectron spectroscopy (XPS), and Rutherford backscattering spectrometry (RBS). The STM results show that square-root 3 x square-root 3 reconstructions are obtained for room-temperature deposition of 1/3 ML of Sn followed by sample annealing in a broad temperature range. A T4 Sn adatom square-root 3 x square-root 3 phase is formed for temperatures between 500 and 800-degrees-C, with a concentration of defects that is strongly dependent on the temperature and which is as high as 25% for the lowest temperatures. Above 825-degrees-C a second square-root 3 x square-root 3 adatom reconstruction is formed, a mosaic-like phase with a 1: 1 mixture of Si and Sn atoms in T4 positions. The results from investigations of the higher coverage 2 square-root 3 x 2 square-root 3 reconstruction by XPS and RBS support the theory that this phase is a two-layer epitaxial Sn structure with all Si(111) dangling bonds saturated. The Sn coverage for this phase was determined to be between 1 and 1.2 ML.

Place, publisher, year, edition, pages
1994. Vol. 314, no 2, 179-187 p.
National Category
Natural Sciences
Identifiers
URN: urn:nbn:se:kth:diva-84175DOI: 10.1016/0039-6028(94)90005-1ISI: A1994NY16200005OAI: oai:DiVA.org:kth-84175DiVA: diva2:499249
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text
By organisation
School of Information and Communication Technology (ICT)
In the same journal
Surface Science
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar

doi
urn-nbn

Altmetric score

doi
urn-nbn
Total: 292 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf