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SURFACE CORE-LEVEL SHIFTS ON GE(100) - C(4X2) TO 2X1 AND 1X1 PHASE-TRANSITIONS
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
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1992 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 45, no 12, p. 6692-6699Article in journal (Refereed) Published
Abstract [en]

By comparing, under identical experimental conditions, high-resolution synchrotron-radiation core-level photoemission spectra taken from both Ge(111) and Ge(100) samples, we establish that the decomposition of the Ge 3d lines from the clean Ge(100) 2 x 1 surface at room temperature requires two surface components shifted by -0.23 and -0.60 eV relative to the bulk one. This deconvolution is fully consistent with the asymmetric-dimer reconstruction model of this surface. We further study the reversible phase transitions that occur on this surface: 2 x 1 <--> c(4 x 2) at low temperature; 2 x 1 <--> 1 x 1 at high temperature. We show from both core-level and valence-band studies that the number of dimer bonds is essentially conserved in these transitions. We also suggest, by comparing a dimer with an Ising spin, that these transitions correspond, respectively, to an antiferromagnetic ordering at low temperatures and to a paramagnetic disordering at high temperatures.

Place, publisher, year, edition, pages
1992. Vol. 45, no 12, p. 6692-6699
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84178DOI: 10.1103/PhysRevB.45.6692ISI: A1992HL04900031OAI: oai:DiVA.org:kth-84178DiVA, id: diva2:499255
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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