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SN-INDUCED SURFACE RECONSTRUCTIONS ON THE GE(111) SURFACE STUDIED WITH SCANNING TUNNELING MICROSCOPY
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
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1992 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 271, no 3, L357-L361 p.Article in journal (Refereed) Published
Abstract [en]

Scanning tunneling microscopy (STM) has been used to study different Sn induced reconstructions on the Ge(111) surface; namely the (7 x 7), (5 x 5) and (square-root 3 x square-root 3)R30-degrees structures. The first two have been confirmed to be of the dimer adatom stacking fault (DAS) type with adatoms mainly being Sn. The (square-root 3 x square-root 3)R30-degrees superstructure was found at different Sn depositions. At 0.4 monolayer (ML) Sn coverage a homogeneous Sn adatom layer is adsorbed on the (1 x 1) surface in threefold sites directly over second-layer atoms (T4), while at low coverage, 0.1 ML, the top layer is a mixture of Sn and Ge atoms. We also propose the chemical identities of the different atoms seen in the STM images as related to their apparent height.

Place, publisher, year, edition, pages
1992. Vol. 271, no 3, L357-L361 p.
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84189DOI: 10.1016/0039-6028(92)90890-IISI: A1992JA63900002OAI: oai:DiVA.org:kth-84189DiVA: diva2:499269
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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