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GROWTH AND EPITAXY OF YB SILICIDES ON SI(111)
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
1991 (English)In: Journal of Vacuum Science & Technology. A. Vacuum, Surfaces, and Films, ISSN 0734-2101, E-ISSN 1520-8559, Vol. 9, no 3, 1942-1945 p.Article in journal (Refereed) Published
Abstract [en]

Yb silicides have been grown epitaxially on the Si(111) surface using solid-state epitaxy with annealing to 400-degrees-C. The amount of deposited Yb was varied from parts of a monolayer to films being about 40 monolayer thick. Auger- and photoelectron spectroscopy showed that Si segregates into the Yb overlayer at room temperature and that a strong reaction occurs during annealing to 400-degrees-C leading to the formation of thick silicides. The epitaxial silicides showed a 1 x 1 or a unroofed-radical 3 x unroofed-radical 3 low-energy electron diffraction pattern depending on the detailed preparation procedure. The composition of the silicide was found to be YbSi2-x.

Place, publisher, year, edition, pages
1991. Vol. 9, no 3, 1942-1945 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:kth:diva-84203DOI: 10.1116/1.577549ISI: A1991FR76300130OAI: oai:DiVA.org:kth-84203DiVA: diva2:499277
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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