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The electronic structure of In- and As-terminated InAs(001) surfaces
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
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1997 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 374, no 1-3, 73-79 p.Article in journal (Refereed) Published
Abstract [en]

The InAs(001) 2 x 4 and 4 x 2 surfaces have been investigated by angle-resolved photoemission. The X(3) and X(5) points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Gamma-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions [110] and [1(1) over bar0$], three surface induced stares were identified on both the InAs(001)4 x 2 and the InAs(001)2 x 4 surface. (C) 1997 Elsevier Science B.V.

Place, publisher, year, edition, pages
1997. Vol. 374, no 1-3, 73-79 p.
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Natural Sciences
URN: urn:nbn:se:kth:diva-84204DOI: 10.1016/S0039-6028(96)00745-5ISI: A1997WN42500009OAI: diva2:499280
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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