The electronic structure of In- and As-terminated InAs(001) surfaces
1997 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 374, no 1-3, 73-79 p.Article in journal (Refereed) Published
The InAs(001) 2 x 4 and 4 x 2 surfaces have been investigated by angle-resolved photoemission. The X(3) and X(5) points were found to be located 6.0 and 2.7 eV below the valence band maximum, respectively, and the dispersion of bulk bands along the Gamma-X direction in the bulk Brillouin zone were well described by a theoretical calculation. From angle-resolved valence band spectra measured along the high symmetry directions  and [1(1) over bar0$], three surface induced stares were identified on both the InAs(001)4 x 2 and the InAs(001)2 x 4 surface. (C) 1997 Elsevier Science B.V.
Place, publisher, year, edition, pages
1997. Vol. 374, no 1-3, 73-79 p.
IdentifiersURN: urn:nbn:se:kth:diva-84204DOI: 10.1016/S0039-6028(96)00745-5ISI: A1997WN42500009OAI: oai:DiVA.org:kth-84204DiVA: diva2:499280
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved