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Well-Known "Surface State" on Si(111)2×1 Identified as a Bulk Contribution
KTH, School of Information and Communication Technology (ICT). (Materialfysik)ORCID iD: 0000-0001-7409-575X
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1984 (English)In: Physical Review Letters, ISSN 0031-9007, Vol. 52, no 25, 2265-2268 p.Article in journal (Refereed) Published
Abstract [en]

Using polarization-dependent angle-resolved photoemission we show that two dominating structures in the photoemission spectra are due to direct transitions from the uppermost two valence bands in silicon. The final-state band for these transitions at photon energies 10.2-21.2 eV is found to have free-electron-like dispersion. Our results imply that that threefold-symmetry emission often assigned to back-bond surface states on Si(111)2×1 is really due to bulk photoemission.

Place, publisher, year, edition, pages
1984. Vol. 52, no 25, 2265-2268 p.
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Natural Sciences
URN: urn:nbn:se:kth:diva-84199DOI: 10.1103/PhysRevLett.52.2265ISI: A1984SV88800019ScopusID: 2-s2.0-24544455367OAI: diva2:499294

QC 20140318

Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2014-03-18Bibliographically approved

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Karlsson, Ulf OFlodström, S Anders
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