SURFACE ELECTRONIC-STRUCTURE OF INAS(110)
1993 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 47, no 4, 2427-2430 p.Article in journal (Refereed) Published
The electronic structure of the InAs(I 10) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines GAMMA-XBARBAR and GAMMA-YBARBAR of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus k parallel-to dispersion along the line GAMMA-XBARBAR and the line GAMMA-YBARBAR of the SBZ has been determined. The structures are identified as A5, A4, and A3 along GAMMA-XBARBAR and as A5, A4, and C2 along GAMMA-YBARBAR.
Place, publisher, year, edition, pages
1993. Vol. 47, no 4, 2427-2430 p.
IdentifiersURN: urn:nbn:se:kth:diva-84427DOI: 10.1103/PhysRevB.47.2427ISI: A1993KK58400086OAI: oai:DiVA.org:kth-84427DiVA: diva2:499340
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved