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SURFACE ELECTRONIC-STRUCTURE OF INAS(110)
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
1993 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 47, no 4, 2427-2430 p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure of the InAs(I 10) cleavage surface has been studied by angle-resolved photoelectron spectroscopy. The bulk band structure has been calculated utilizing the augmented plane-wave method and then the bulk bands have been projected along the lines GAMMA-XBARBAR and GAMMA-YBARBAR of the surface Brillouin zone (SBZ). Three surface-related structures have been found and their initial state versus k parallel-to dispersion along the line GAMMA-XBARBAR and the line GAMMA-YBARBAR of the SBZ has been determined. The structures are identified as A5, A4, and A3 along GAMMA-XBARBAR and as A5, A4, and C2 along GAMMA-YBARBAR.

Place, publisher, year, edition, pages
1993. Vol. 47, no 4, 2427-2430 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:kth:diva-84427DOI: 10.1103/PhysRevB.47.2427ISI: A1993KK58400086OAI: oai:DiVA.org:kth-84427DiVA: diva2:499340
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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