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KTH, School of Information and Communication Technology (ICT). (materialfysik)
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1994 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 307, 885-889 p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure of the InAs(111BAR)1 X 1 surface has been investigated by angle resolved photoelectron spectroscopy along the symmetry lines GAMMAKBAR, GAMMAMBAR, and GAMMAMBAR of the surface Brillouin zone. The bulk valence band structure was calculated using a combination of the linear augmented plane-wave method and the relativistic augmented plane-wave method. We have projected the theoretical bulk band structure onto the surface Brillouin zone to separate surface states from surface resonances. Two surface related structures, S1 and S2, have been observed and their E(i)(k(parallel-to)) dispersions are established. Both S1 and S2 show the symmetry of the 1 X 1 surface Brillouin zone, which is consistent with the observed 1 X 1 LEED pattern. We identify S1 as the As-derived dangling bond state, and S2 is associated with the backbonds connecting the As atoms in the surface layer with the underlying In layer.

Place, publisher, year, edition, pages
1994. Vol. 307, 885-889 p.
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Natural Sciences
URN: urn:nbn:se:kth:diva-84426DOI: 10.1016/0039-6028(94)91509-1ISI: A1994NH82300045OAI: diva2:499354
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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