ADSORPTION OF POTASSIUM ON THE SI(111)ROOT-3X-ROOT-3R30-DEGREES - B-SURFACE - OBSERVATION OF AN INSULATING SURFACE AT SUBMONOLAYER COVERAGE
1993 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 47, no 20, 13887-13890 p.Article in journal (Refereed) Published
The Si(111) square-root 3 X square-root 3R 30-degrees:B surface with submonolayer coverages of potassium has been studied with angle-resolved photoelectron spectroscopy. Deposition of potassium leads to the formation of a state 0.7 eV below the Fermi level. The energy position of this state showed only a minor dependence on the actual potassium coverage and the state displayed a small dispersion of 0.1 eV when probed along the GAMMABAR-MBAR' direction in the square-root 3 X square-root 3R 30-degrees-surface Brillouin zone. These results support the idea that a mainly covalent bonding exists between the potassium atoms and the Si surface.
Place, publisher, year, edition, pages
1993. Vol. 47, no 20, 13887-13890 p.
IdentifiersURN: urn:nbn:se:kth:diva-84447DOI: 10.1103/PhysRevB.47.13887ISI: A1993LF06900105OAI: oai:DiVA.org:kth-84447DiVA: diva2:499356
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved