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ADSORPTION OF POTASSIUM ON THE SI(111)ROOT-3X-ROOT-3R30-DEGREES - B-SURFACE - OBSERVATION OF AN INSULATING SURFACE AT SUBMONOLAYER COVERAGE
KTH, School of Information and Communication Technology (ICT). (Mateialfysik)
1993 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 47, no 20, p. 13887-13890Article in journal (Refereed) Published
Abstract [en]

The Si(111) square-root 3 X square-root 3R 30-degrees:B surface with submonolayer coverages of potassium has been studied with angle-resolved photoelectron spectroscopy. Deposition of potassium leads to the formation of a state 0.7 eV below the Fermi level. The energy position of this state showed only a minor dependence on the actual potassium coverage and the state displayed a small dispersion of 0.1 eV when probed along the GAMMABAR-MBAR' direction in the square-root 3 X square-root 3R 30-degrees-surface Brillouin zone. These results support the idea that a mainly covalent bonding exists between the potassium atoms and the Si surface.

Place, publisher, year, edition, pages
1993. Vol. 47, no 20, p. 13887-13890
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Natural Sciences
Identifiers
URN: urn:nbn:se:kth:diva-84447DOI: 10.1103/PhysRevB.47.13887ISI: A1993LF06900105OAI: oai:DiVA.org:kth-84447DiVA, id: diva2:499356
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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