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DIMER FORMATION AND ELECTRONIC-STRUCTURE ON THE GE(100)(2X1)-SB SURFACE
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
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1992 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 278, no 1-2, L131-L134 p.Article in journal (Refereed) Published
Abstract [en]

Deposition of antimony on Ge(100)2 X 1 results in a well-ordered, highly passivated surface. From a comparison between core-level data and angle-resolved photoemission data, we conclude that the observed 2 x 1 reconstruction is caused by the formation of symmetric Sb-Sb dimers on the Ge surface.

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1992. Vol. 278, no 1-2, L131-L134 p.
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84446DOI: 10.1016/0039-6028(92)90574-PISI: A1992JV84100006OAI: oai:DiVA.org:kth-84446DiVA: diva2:499362
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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