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Bulk and surface electronic structure of InAs(110)
KTH, School of Information and Communication Technology (ICT). (materialfysik)
1998 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 398, no 3, 395-+ p.Article in journal (Refereed) Published
Abstract [en]

The InAs(110) cleavage surface has been investigated by angle-resolved photoelectron spectroscopy. A separation between the In 4d(5/2) bulk component and the valence band maximum of 16.8 eV is found to be consistent with normal emission spectra. Experimental energy band dispersions, E-i(k), for the four bulk valence bands are established along the Sigma-line of the bulk Brillouin zone. A bulk band structure calculation utilizing the augmented plane-wave method is made. The experimental and calculated E-i(k) dispersions are found to be in good agreement with each other. E-i(k(parallel to)) dispersions for two surface-related structures are established along the lines <(Gamma)over bar>-(M) over bar and (Y) over bar-(M) over bar of the surface Brillouin zone. (C) 1998 Elsevier Science B.V.

Place, publisher, year, edition, pages
1998. Vol. 398, no 3, 395-+ p.
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Natural Sciences
URN: urn:nbn:se:kth:diva-84444DOI: 10.1016/S0039-6028(98)80045-9ISI: 000072611200015OAI: diva2:499376
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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