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Etching and a disordered overlayer on the Ge(100)-S surface
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1997 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 115, no 1, 87-95 p.Article in journal (Refereed) Published
Abstract [en]

High resolution core level photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM) have been used to study the adsorption and desorption of S on and off the Ge(100) surface. The previously proposed bridge adsorption site of S is consistent with our results at low coverage. At saturation the substrate contains several GeSx species, with x = 0.5 to 4. Both photoemission and STM reveals a non-ideal surface, with a saturation coverage above one monolayer. Furthermore, S is found to etch the substrate. The reaction products forms a disordered overlayer on top of the interface. This overlayer is transparent in the filled state STM images.

Place, publisher, year, edition, pages
1997. Vol. 115, no 1, 87-95 p.
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84428DOI: 10.1016/S0169-4332(96)00850-1ISI: A1997WX17800012OAI: oai:DiVA.org:kth-84428DiVA: diva2:499389
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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