Iodine reaction and passivation of the Ge(111) surface
1997 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 371, no 2-3, 264-276 p.Article in journal (Refereed) Published
The Ge(111)-I surface has been studied at different I coverages ranging from 0.05 hit up to saturation, and different annealing temperatures, using photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM). At saturation the surface is covered with I in the top site and Gel, species in the bridge site, coexisting with small islands/clusters comprising GeI2, giving a total coverage of I in GeIx species of 1.15 ML. The chemically induced shifts in the Ge 3d core level are 0.39 eV per attached I atom. The coverage determined from the I 4d core level is higher than 1.15 ML, which we explain by the presence of I not bound to Ge. Annealing at 200 degrees C decreases the iodine coverage, whereas the I 4d and Ge 3d line profiles are practically unchanged. Further heating desorbs the iodide species and restores the virgin c(2 x 8) structure.
Place, publisher, year, edition, pages
1997. Vol. 371, no 2-3, 264-276 p.
IdentifiersURN: urn:nbn:se:kth:diva-84443DOI: 10.1016/S0039-6028(96)01094-1ISI: A1997WE53100010OAI: oai:DiVA.org:kth-84443DiVA: diva2:499392
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved