Change search
ReferencesLink to record
Permanent link

Direct link
Iodine reaction and passivation of the Ge(111) surface
Show others and affiliations
1997 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 371, no 2-3, 264-276 p.Article in journal (Refereed) Published
Abstract [en]

The Ge(111)-I surface has been studied at different I coverages ranging from 0.05 hit up to saturation, and different annealing temperatures, using photoelectron spectroscopy (PES) and scanning tunneling microscopy (STM). At saturation the surface is covered with I in the top site and Gel, species in the bridge site, coexisting with small islands/clusters comprising GeI2, giving a total coverage of I in GeIx species of 1.15 ML. The chemically induced shifts in the Ge 3d core level are 0.39 eV per attached I atom. The coverage determined from the I 4d core level is higher than 1.15 ML, which we explain by the presence of I not bound to Ge. Annealing at 200 degrees C decreases the iodine coverage, whereas the I 4d and Ge 3d line profiles are practically unchanged. Further heating desorbs the iodide species and restores the virgin c(2 x 8) structure.

Place, publisher, year, edition, pages
1997. Vol. 371, no 2-3, 264-276 p.
National Category
Natural Sciences
URN: urn:nbn:se:kth:diva-84443DOI: 10.1016/S0039-6028(96)01094-1ISI: A1997WE53100010OAI: diva2:499392
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text
By organisation
School of Information and Communication Technology (ICT)
In the same journal
Surface Science
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 9 hits
ReferencesLink to record
Permanent link

Direct link