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SURFACE-SHIFTED CORE LEVELS IN MO3SI (100) AND (110)
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
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1991 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 43, no 15, p. 12355-12363Article in journal (Refereed) Published
Abstract [en]

High-resolution photoemission studies of core levels in Mo3Si have been carried out using synchrotron radiation. Surface-shifted Si 2p components were observed on annealed (100) and (110) crystal faces and were unambiguously identified in adsorption experiments of hydrogen and oxygen. The surface core-level shifts were extracted using a curve-fitting procedure. For the (110) surface one shifted component was identified having a surface shift of -1.02(1) eV. For the (100) surface two shifted components were found to be necessary in order to model the experimental spectrum, the stronger component having a shift of -0.68(2) eV and the weaker a shift of -1.03(4) eV. No surface-shifted components could be identified in the Mo 4p photoelectron spectrum. Upon oxygen adsorption a chemically shifted Si 2p component was observed, indicating silicon oxidation, while no chemically shifted component appeared in the Mo 4p spectrum. In the Si 2p spectrum pronounced photoelectron-diffraction effects were observed both as a function of photoelectron kinetic energy and emission angle. These findings are presented and discussed.

Place, publisher, year, edition, pages
1991. Vol. 43, no 15, p. 12355-12363
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-84445DOI: 10.1103/PhysRevB.43.12355ISI: A1991FM82300020OAI: oai:DiVA.org:kth-84445DiVA, id: diva2:499414
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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