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Electron accumulation at the InAs(110) cleavage surface
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
1998 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 402, no 1-3, 590-594 p.Article in journal (Refereed) Published
Abstract [en]

The InAs(110) cleavage surface is studied by photoelectron spectroscopy based on an amplified short-pulse titanium:sapphire laser system in both probe-only and pump-and-probe modes. The probe-only spectra show that electrons accumulate in the conduction band at the surface as a function of time after cleavage, while the pump-and-probe spectra show a different response from the excited accumulation layer peak when using s- and p-polarized probe pulses. Moreover, no surface photovoltage is detected when the accumulation layer is optically pumped. (C) 1998 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
1998. Vol. 402, no 1-3, 590-594 p.
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84647DOI: 10.1016/S0039-6028(98)00002-8ISI: 000074610800121OAI: oai:DiVA.org:kth-84647DiVA: diva2:499462
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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