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Reaction of I-2 with the (001) surfaces of GaAs, InAs, and InSb .2. Ordering of the iodine overlayer
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1996 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 54, no 3, 2114-2120 p.Article in journal (Refereed) Published
Abstract [en]

The overlayer formed by the reaction of molecular iodine (I-2) with GaAs(001), InAs(001), and InSb(001) is investigated with synchrotron soft x-ray photoelectron spectroscopy (SXPS) and scanning tunneling microscopy (STM). Two components, separated by about 0.5 eV, are present in all of the I 4d SXPS spectra. At very low iodine coverages, the high binding energy (BE) component dominates. When the iodine coverage saturates, however, the two components have equal intensities. In contrast to GaAs and InAs, exposure of InSb(001)-c(8x2) to additional I-2 results in a further increase of the relative intensity of the low-BE component. STM images of I-2 covered InSb(001)-c(8x2) directly reveal the ordering in the overlayer. Islands are visible for submonolayer coverages, suggesting that adsorption occurs via a mobile precursor state. STM images feature occupies a 1x1 unit cell with the same spacing as bulk-terminated InSb(001). The other feature has a coverage of similar to 1/3 ML and is arranged in pairs oriented along the [110] azimuth.

Place, publisher, year, edition, pages
1996. Vol. 54, no 3, 2114-2120 p.
National Category
Natural Sciences
URN: urn:nbn:se:kth:diva-84653DOI: 10.1103/PhysRevB.54.2114ISI: A1996UZ86100101OAI: diva2:499492
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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