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KTH, School of Information and Communication Technology (ICT). (Materialfysik)
1993 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 293, no 3, 254-259 p.Article in journal (Refereed) Published
Abstract [en]

The formation of Sm silicides on Si(111) by means of solid phase epitaxy has been studied with low energy electron diffraction, Auger electron spectroscopy and photoelectron spectroscopy of the Sm 4f level and Si 2p level. A limited reaction is found to occur already at room temperature whereas at higher temperatures a strongly intermixed Sm/Si layer showing some long range order is formed. The Sm atoms of this intermixed phase are found to be completely trivalent in accordance with expectations. The intermixed layer consists of two silicides with different compositions, one of them being SmSi2-x, the other being tentatively ascribed to SmSi.

Place, publisher, year, edition, pages
1993. Vol. 293, no 3, 254-259 p.
National Category
Natural Sciences
URN: urn:nbn:se:kth:diva-84659DOI: 10.1016/0039-6028(93)90319-FISI: A1993LT52900022OAI: diva2:499498
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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