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Electronic structure of InAs((1)over-bar-(1)over-bar-(1)over-bar)2x2 and InSb((1)over-bar-(1)over-bar-(1)over-bar)2x2 studied by angle-resolved photoelectron spectroscopy
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
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1996 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 54, no 3, 1833-1840 p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure of molecular-beam-epitaxy-grown InAs((111) over bar)2x2 and InSb((111) over bar)2x2 surfaces is investigated by angle-resolved photoelectron spectroscopy. Valence band spectra, and dispersions of five surface-related structures, are presented. The qualitative similarities of data from the two surfaces indicate that they are very similar, with respect to atomic and electronic structure. Comparisons with other (111) surfaces support the identification of the surface-related structures.

Place, publisher, year, edition, pages
1996. Vol. 54, no 3, 1833-1840 p.
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84662DOI: 10.1103/PhysRevB.54.1833ISI: A1996UZ86100070OAI: oai:DiVA.org:kth-84662DiVA: diva2:499505
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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