As overlayer on GaAs(110) studied with photoemission
1995 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 52, no 23, 16602-16607 p.Article in journal (Refereed) Published
As-terminated GaAs(110) surfaces were prepared on ex situ cleaved substrates by molecular-beam epitaxy. The surface stoichiometry was controlled by postgrowth As deposition. Photoemission from a surface covered with a monolayer As was investigated in detail using synchrotron radiation. Two different surface components were found in core-level spectra, which are interpreted as due to adatoms bonding to the surface anions and cations. In the valence-band spectra several surface states were identified, in analogy with previous reports on the isoelectronic Sb/GaAs(110) system. The polarization dependence is not the same, however, which leads us to the conclusion that the adlayer bonding mechanisms are different in the two cases.
Place, publisher, year, edition, pages
1995. Vol. 52, no 23, 16602-16607 p.
IdentifiersURN: urn:nbn:se:kth:diva-84652DOI: 10.1103/PhysRevB.52.16602ISI: A1995TN30900047OAI: oai:DiVA.org:kth-84652DiVA: diva2:499536
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved