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As overlayer on GaAs(110) studied with photoemission
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1995 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 52, no 23, 16602-16607 p.Article in journal (Refereed) Published
Abstract [en]

As-terminated GaAs(110) surfaces were prepared on ex situ cleaved substrates by molecular-beam epitaxy. The surface stoichiometry was controlled by postgrowth As deposition. Photoemission from a surface covered with a monolayer As was investigated in detail using synchrotron radiation. Two different surface components were found in core-level spectra, which are interpreted as due to adatoms bonding to the surface anions and cations. In the valence-band spectra several surface states were identified, in analogy with previous reports on the isoelectronic Sb/GaAs(110) system. The polarization dependence is not the same, however, which leads us to the conclusion that the adlayer bonding mechanisms are different in the two cases.

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1995. Vol. 52, no 23, 16602-16607 p.
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84652DOI: 10.1103/PhysRevB.52.16602ISI: A1995TN30900047OAI: oai:DiVA.org:kth-84652DiVA: diva2:499536
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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