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ANOMALOUS QUENCHING OF PHOTOEMISSION FROM BULK STATES BY DEPOSITION OF CS ON INAS(100)
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1995 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 52, no 3, p. 1470-1473Article in journal (Refereed) Published
Abstract [en]

The effect of angle-resolved valence-hand photoelectron spectra from adsorption of small amounts of Cs on InAs(100)4 X 2 has been studied. It is shown that a bulk interband transition is totally quenched at a coverage of Cs that leaves the 4 X 2 reconstruction practically intact. The surface order was monitored by low-energy electron diffraction and photoemission from surface states. A shift of the surface Fermi level to well above the conduction-band minimum is also observed. It is proposed that the resulting development of a two-dimensional electron gas at the surface affects the bulk states probed in photoemission.

Place, publisher, year, edition, pages
1995. Vol. 52, no 3, p. 1470-1473
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84710DOI: 10.1103/PhysRevB.52.1470ISI: A1995RL52500015OAI: oai:DiVA.org:kth-84710DiVA, id: diva2:499556
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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