ANOMALOUS QUENCHING OF PHOTOEMISSION FROM BULK STATES BY DEPOSITION OF CS ON INAS(100)
1995 (English)In: Physical Review B Condensed Matter, ISSN 0163-1829, E-ISSN 1095-3795, Vol. 52, no 3, 1470-1473 p.Article in journal (Refereed) Published
The effect of angle-resolved valence-hand photoelectron spectra from adsorption of small amounts of Cs on InAs(100)4 X 2 has been studied. It is shown that a bulk interband transition is totally quenched at a coverage of Cs that leaves the 4 X 2 reconstruction practically intact. The surface order was monitored by low-energy electron diffraction and photoemission from surface states. A shift of the surface Fermi level to well above the conduction-band minimum is also observed. It is proposed that the resulting development of a two-dimensional electron gas at the surface affects the bulk states probed in photoemission.
Place, publisher, year, edition, pages
1995. Vol. 52, no 3, 1470-1473 p.
IdentifiersURN: urn:nbn:se:kth:diva-84710DOI: 10.1103/PhysRevB.52.1470ISI: A1995RL52500015OAI: oai:DiVA.org:kth-84710DiVA: diva2:499556
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved