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CLEAN AND CS-EXPOSED SI(111)ROOT-3X-ROOT-3-B SURFACE STUDIED WITH HIGH-RESOLUTION PHOTOEMISSION
KTH, School of Information and Communication Technology (ICT). (Materialfysik)
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1995 (English)In: Physical Review B. Condensed Matter and Materials Physics, ISSN 1098-0121, E-ISSN 1550-235X, Vol. 52, no 15, 11165-11171 p.Article in journal (Refereed) Published
Abstract [en]

Both the clean and Cs-exposed Si(111)root 3X root 3R30 degrees:B surfaces have been investigated by high-resolution photoemission. In the spectra from the Si 2p level, contributions were identified from the bulk, the adatoms plus the first layer, the second and 2/3 ML of the third-layer atoms not binding to the B atoms, and, finally, the 1/3 ML of third-layer atoms binding to the boron atoms. The interaction between the Cs atoms and the surface is found to be dependent on the coverage. At low coverages the geometric and electronic structure of the Si(111)root 3X root 3R30 degrees:B interface is only to a minor degree affected by the presence of Cs on the surface. At high coverage the Cs atoms react with the surface and alter the binding configuration of the Si adatoms.

Place, publisher, year, edition, pages
1995. Vol. 52, no 15, 11165-11171 p.
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84711DOI: 10.1103/PhysRevB.52.11165ISI: A1995TA85200079OAI: oai:DiVA.org:kth-84711DiVA: diva2:499559
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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