Nitride formation and dangling-bond passivation on Si(111)-(7x7) with NH3
1997 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 394, no 1-3, L155-L161 p.Article in journal (Refereed) Published
Thermal nitridation of the Si(111)-(7 x 7) reconstructed surface with ammonia has been investigated using scanning tunneling microscopy (STM). True nitride formation in the form of ring-like structures as in stoichiometric silicon nitride (Si3N4) was observed at imperfections on the surface, which otherwise preserved the characteristics of the (7 x 7) reconstruction. However, the ratio of reacted adatoms in the reconstruction never exceeded similar to 50%, indicative of a frustrated saturation behavior for the adatom dangling bonds in the Si(111)-(7 x 7)-NH3 reaction system. (C) 1997 Elsevier Science B.V.
Place, publisher, year, edition, pages
1997. Vol. 394, no 1-3, L155-L161 p.
IdentifiersURN: urn:nbn:se:kth:diva-84717DOI: 10.1016/S0039-6028(97)00800-5ISI: 000071479500005OAI: oai:DiVA.org:kth-84717DiVA: diva2:499577
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved