CORE-LEVEL SPECTROSCOPY STUDY OF THE INITIAL FORMATION OF TIN GERMANIUM INTERFACES
1992 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 56-8, 178-184 p.Article in journal (Refereed) Published
We have studied the initial stages of the Schottky barrier formation at Sn/Ge(100) interfaces, in comparison with Sn/Ge(111) ones, with high resolution core-level spectroscopy measurements (Ge 3d and Sn 4d shallow core levels) using synchrotron radiation. A detailed, stringent decomposition of the core lines reveals three different components for both Ge and Sn on the two surfaces. The three components of the Sn 4d line on the Ge(100)2 x 1-Sn surface are interpreted as due to three different adsorption sites simultaneously occupied, while the persistence of the surface components in the Ge 3d core lines suggests that the building block of the reconstruction remains an asymmetric Ge dimer.
Place, publisher, year, edition, pages
1992. Vol. 56-8, 178-184 p.
IdentifiersURN: urn:nbn:se:kth:diva-84708DOI: 10.1016/0169-4332(92)90231-LISI: A1992HM07500028OAI: oai:DiVA.org:kth-84708DiVA: diva2:499596
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved