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KTH, School of Information and Communication Technology (ICT). (Materialfysik)
1991 (English)In: Surface Science, ISSN 0039-6028, E-ISSN 1879-2758, Vol. 251, 101-107 p.Article in journal (Refereed) Published
Abstract [en]

High resolution photoemission studies of the core levels in Cr3Si have been carried out using synchrotron radiation. Investigations were performed both on the clean surface, cleaned in situ by sputter and annealing cycles, and after oxygen exposures. A surface shifted Si 2p component was observed on the annealed surface but no surface shifted component could be identified in the Cr 3p spectrum. The surface shift was extracted using a curve fitting procedure and found to be -0.30(5) eV. The shift expected due to the loss of coordination at the surface is found to be negative but of about half the size of the observed shift. Upon oxygen adsorption at room temperature a chemically shifted Si 2p component appeared already after an exposure of < 1 L, indicating rapid silicon oxidation, while a chemically shifted Cr 3p component could be resolved only after exposures of about 10 L. These findings are presented and discussed.

Place, publisher, year, edition, pages
1991. Vol. 251, 101-107 p.
National Category
Natural Sciences
URN: urn:nbn:se:kth:diva-84734DOI: 10.1016/0039-6028(91)90962-RISI: A1991FY12600021OAI: diva2:499604
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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