CeO2 on Si(111) 7 X 7 and Si(111)-H 1 X 1, an interface study by high-resolution photoelectron spectroscopy
1999 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 148, no 3-4, 164-170 p.Article in journal (Refereed) Published
The formation of the CeO2-Si(111) interface was studied by high-resolution photoelectron spectroscopy. It is shown that CeO2 and Si(111) forms a highly reactive: interface with a strong interdiffusion of Si into the CeO2. A passive silicon surface formed by saturating the Si dangling bonds with hydrogen is considerably less reactive. Defects on the surface, however, act as nucleations centres for reactions of a Si:Ce:O matrix. Oxygen leaves the surface at about 800 degrees C and at 1000 degrees C a surface reconstruction of Si(111)-Ce 2 X 2/root 3 X root 3 is formed. (C) 1999 Elsevier Science B.V. All rights reserved.
Place, publisher, year, edition, pages
1999. Vol. 148, no 3-4, 164-170 p.
IdentifiersURN: urn:nbn:se:kth:diva-84799DOI: 10.1016/S0169-4332(99)00218-4ISI: 000081439400005OAI: oai:DiVA.org:kth-84799DiVA: diva2:499637
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved