Change search
ReferencesLink to record
Permanent link

Direct link
CeO2 on Si(111) 7 X 7 and Si(111)-H 1 X 1, an interface study by high-resolution photoelectron spectroscopy
Show others and affiliations
1999 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 148, no 3-4, 164-170 p.Article in journal (Refereed) Published
Abstract [en]

The formation of the CeO2-Si(111) interface was studied by high-resolution photoelectron spectroscopy. It is shown that CeO2 and Si(111) forms a highly reactive: interface with a strong interdiffusion of Si into the CeO2. A passive silicon surface formed by saturating the Si dangling bonds with hydrogen is considerably less reactive. Defects on the surface, however, act as nucleations centres for reactions of a Si:Ce:O matrix. Oxygen leaves the surface at about 800 degrees C and at 1000 degrees C a surface reconstruction of Si(111)-Ce 2 X 2/root 3 X root 3 is formed. (C) 1999 Elsevier Science B.V. All rights reserved.

Place, publisher, year, edition, pages
1999. Vol. 148, no 3-4, 164-170 p.
National Category
Natural Sciences
URN: urn:nbn:se:kth:diva-84799DOI: 10.1016/S0169-4332(99)00218-4ISI: 000081439400005OAI: diva2:499637
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full text
By organisation
School of Information and Communication Technology (ICT)
In the same journal
Applied Surface Science
Natural Sciences

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 23 hits
ReferencesLink to record
Permanent link

Direct link