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Band structure evolution in InAs overlayers on GaAs(110)
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1996 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 104, 608-614 p.Article in journal (Refereed) Published
Abstract [en]

An angle-resolved photoemission study of MBE grown InAs/GaAs(110) hetero-structures was carried out to investigate the establishment of valence bands as a function of overlayer thickness. The valence band spectra were found to change gradually up to thicknesses well above 10 nm. The data are interpreted in terms of excitations within the overlayer from a combination of substrate and overlayer initial states, the former tailing into the overlayer.

Place, publisher, year, edition, pages
1996. Vol. 104, 608-614 p.
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84794DOI: 10.1016/S0169-4332(96)00210-3ISI: A1996VR57300097OAI: oai:DiVA.org:kth-84794DiVA: diva2:499639
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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