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Quantum size effects in epitaxial ErAs on GaAs(001)
KTH, School of Information and Communication Technology (ICT).
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1996 (English)In: Physical Review Letters, ISSN 0031-9007, E-ISSN 1079-7114, Vol. 77, no 24, 4946-4949 p.Article in journal (Refereed) Published
Abstract [en]

The electronic structure of very thin epitaxial ErAs layers on GaAs(100) is studied with angle resolved photoelectron spectroscopy. Clear evidence is found for confinement induced quantization of states around the Fermi level. From the dispersive properties of the quantum well states effective masses are obtained, representing electron motion parallel to the surface layers and orthogonal to the layers. We find, for the first time, that effective masses along equivalent bulk directions (XW) are significantly different in the thin layers. Furthermore, the bottom of the highest occupied band shifts towards the Fermi level when going from very thin to thick ErAs layers.

Place, publisher, year, edition, pages
1996. Vol. 77, no 24, 4946-4949 p.
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Natural Sciences
Identifiers
URN: urn:nbn:se:kth:diva-84795DOI: 10.1103/PhysRevLett.77.4946ISI: A1996VW70700024OAI: oai:DiVA.org:kth-84795DiVA: diva2:499642
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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