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ELECTRONIC-PROPERTIES OF CLEAVED(110) AND MBE-GROWN(100) INAS SURFACES, CLEAN AND COVERED WITH AN ULTRA-THIN AG ADLAYER
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1993 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 70-1, 502-506 p.Article in journal (Refereed) Published
Abstract [en]

The initial electronic structure of the pseudomorphic InAs/GaAs(100) heterostructure as well as that of the Ag/InAs(110) interface at 20 K have been studied by synchrotron radiation photoelectron spectroscopy. In the first case we find that the valence band spectra show no evidence for the formation of bulk-like energy bands. In the second case we prove for the first time that upon deposition of minute amounts of Ag at low temperature onto cleaved InAs(110) substrates one induces a giant movement of the Fermi level well into the conduction band thus creating a strong two-dimensional electron channel at the surface.

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1993. Vol. 70-1, 502-506 p.
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Natural Sciences
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URN: urn:nbn:se:kth:diva-84807DOI: 10.1016/0169-4332(93)90569-WISI: A1993LE93700019OAI: oai:DiVA.org:kth-84807DiVA: diva2:499649
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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