ELECTRONIC-PROPERTIES OF CLEAVED(110) AND MBE-GROWN(100) INAS SURFACES, CLEAN AND COVERED WITH AN ULTRA-THIN AG ADLAYER
1993 (English)In: Applied Surface Science, ISSN 0169-4332, E-ISSN 1873-5584, Vol. 70-1, 502-506 p.Article in journal (Refereed) Published
The initial electronic structure of the pseudomorphic InAs/GaAs(100) heterostructure as well as that of the Ag/InAs(110) interface at 20 K have been studied by synchrotron radiation photoelectron spectroscopy. In the first case we find that the valence band spectra show no evidence for the formation of bulk-like energy bands. In the second case we prove for the first time that upon deposition of minute amounts of Ag at low temperature onto cleaved InAs(110) substrates one induces a giant movement of the Fermi level well into the conduction band thus creating a strong two-dimensional electron channel at the surface.
Place, publisher, year, edition, pages
1993. Vol. 70-1, 502-506 p.
IdentifiersURN: urn:nbn:se:kth:diva-84807DOI: 10.1016/0169-4332(93)90569-WISI: A1993LE93700019OAI: oai:DiVA.org:kth-84807DiVA: diva2:499649
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved