Electrical Properties of Thin Oxides for MOSFETs in the Poly-Si / SiO2 / 6H Silicon Carbide System
1993 (English)In: Solid State Device Research Conference, 1993. ESSDERC ’93. 23rd European, 1993, 497-500 p.Conference paper (Refereed)
This paper describes the fabrication of polysilicon / SiO2 / 6H silicon carbide structures with four different types of thin gate oxides. Wet and dry thermal oxidation, plasma-enhanced chemical vapor deposition (PECVD), and also an alternative method, oxidation of e-beam evaporated silicon, have been investigated. The four oxides were compared using capacitance-voltage measurements and breakdown field measurements. Breakdown fields exceeded 8 MV/cm for the thermal oxides, which is higher than previously published values.
Place, publisher, year, edition, pages
1993. 497-500 p.
MOSFET;SiO2;breakdown field measurements;capacitance-voltage measurements;dry thermal oxidation;electrical properties;plasma-enhanced chemical vapor deposition;silicon carbide system;thin gate oxides;wet thermal oxidation;MOSFET;capacitance measurement;oxidation;plasma CVD;silicon compounds;voltage measurement;
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-84950ISBN: 2-86332-135-8OAI: oai:DiVA.org:kth-84950DiVA: diva2:499710
NR 201408052012-02-132012-02-132012-02-13Bibliographically approved