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Electrical Properties of Thin Oxides for MOSFETs in the Poly-Si / SiO2 / 6H Silicon Carbide System
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
1993 (English)In: Solid State Device Research Conference, 1993. ESSDERC ’93. 23rd European, 1993, 497-500 p.Conference paper, Published paper (Refereed)
Abstract [en]

This paper describes the fabrication of polysilicon / SiO2 / 6H silicon carbide structures with four different types of thin gate oxides. Wet and dry thermal oxidation, plasma-enhanced chemical vapor deposition (PECVD), and also an alternative method, oxidation of e-beam evaporated silicon, have been investigated. The four oxides were compared using capacitance-voltage measurements and breakdown field measurements. Breakdown fields exceeded 8 MV/cm for the thermal oxides, which is higher than previously published values.

Place, publisher, year, edition, pages
1993. 497-500 p.
Keyword [en]
MOSFET;SiO2;breakdown field measurements;capacitance-voltage measurements;dry thermal oxidation;electrical properties;plasma-enhanced chemical vapor deposition;silicon carbide system;thin gate oxides;wet thermal oxidation;MOSFET;capacitance measurement;oxidation;plasma CVD;silicon compounds;voltage measurement;
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-84950ISBN: 2-86332-135-8 (print)OAI: oai:DiVA.org:kth-84950DiVA: diva2:499710
Conference
ESSDERC ’93
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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Zetterling, Carl-Mikael

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