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Low damage, highly anisotropic dry etching of SiC
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1998 (English)In: High Temperature Electronics Conference, 1998. HITEC. 1998 Fourth International, 1998, 10-14 p.Conference paper, Published paper (Refereed)
Abstract [en]

A parametric study of the etching characteristics of 6H p+ and n+ SiC and thin film SiC0.5N0.5 in Inductively Coupled Plasma NF3/O2 and NF 3/Ar discharges has been performed. The etch rates in both chemistries increase monotonically with NF3 percentage and rf chuck power. The etch rates go through a maximum with increasing ICP source power, which is explained by a trade-off between the increasing ion flux and the decreasing ion energy. The anisotropy of the etched features is also a function of ion flux, ion energy and atomic fluorine neutral concentration. Indium-tin-oxide (ITO) masks display relatively good etch selectivity over SiC (maximum of 70:1), while photoresist etches more rapidly than SiC. The surface roughness of SiC is essentially independent of plasma composition for NF3/O2 discharges, while extensive surface degradation occurs for SiCN under high NF3:O2 conditions

Place, publisher, year, edition, pages
1998. 10-14 p.
Keyword [en]
13.56 MHz;250 W;6H n+ SiC;6H p+ SiC;750 W;ICP source power;ITO;ITO masks;InSnO;NF3;NF3 percentage;NF3-Ar;NF3-O2;NF3/Ar discharges;NF3/O2 discharges;SiC;SiC0.5N0.5;atomic F neutral concentration;etch anisotropy;etch rates;etch selectivity;etching characteristics;inductively coupled plasma;ion energy;ion flux;low damage highly anisotropic dry etching;photoresist etch;rf chuck power;surface degradation;surface roughness;thin film SiC0.5N0.5;plasma materials processing;silicon compounds;sputter etching;surface topography;wide band gap semiconductors;
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-84951DOI: 10.1109/HITEC.1998.676752OAI: oai:DiVA.org:kth-84951DiVA: diva2:499722
Conference
HITEC 1998
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2012-02-13Bibliographically approved

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Zetterling, Carl-Mikael

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