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Via-hole etching for SiC
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1999 (English)In: Journal of Vacuum Science & Technology B, ISSN 1071-1023, E-ISSN 1520-8567, Vol. 17, 2050-2054 p.Article in journal (Refereed) Published
Abstract [en]

Four different F2-based plasma chemistries for high-rate etching of SiC under inductively coupled plasma (ICP) conditions were examined. Much higher rates (up to 8000 #x2009; #xc5; #x2009;min-1) were achieved with NF3 and SF6 compared with BF3 and PF5, in good correlation with their bond energies and their dissociation efficiency in the ICP source. Three different materials (Al, Ni, and indium #x2013;tin oxide) were compared as possible masks during deep SiC etching for through-wafer via holes. Al appears to produce the best etch resistance, particularly when O2 is added to the plasma chemistry. With the correct choice of plasma chemistry and mask material, ICP etching appears to be capable of producing via holes in SiC substrates. #xa9; 1999 American Vacuum Society.

Place, publisher, year, edition, pages
1999. Vol. 17, 2050-2054 p.
Keyword [en]
masks;plasma chemistry;silicon compounds;sputter etching;wide band gap semiconductors;
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-84952DOI: 10.1116/1.590870OAI: oai:DiVA.org:kth-84952DiVA: diva2:499725
Note
NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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