Thermal modeling of multi-finger SiC power MESFETs
2005 (English)In: 2005 International Semiconductor Device Research Symposium, 2005, Vol. 2005, 290-291 p.Conference paper (Refereed)
The high critical electrical field of silicon carbide makes it possible to fabricate high power SiC devices, which can handle much higher power than the traditional silicon and gallium arsenide power devices1. SiC power MESFET is one of such devices available on the market for RF applications 2. Despite the high thermal conductivity of the material, the SiC devices may suffer severe self-heating when operating at very high power levels, especially if the gate pitch is small3. The self-heating phenomena of one- and multi-fingered SiC MESFETs were studied through 2D electro-thermal simulations and 2D and 3D steady-state thermal simulations. The device performance degradation caused by self-heating was observed, and is more profound for devices operating at room temperature than for devices working at elevated temperatures. The junction temperature and temperature distribution of devices fabricated on SiC substrates were estimated through both electro-thermal simulations and steady-state thermal simulations, and the results agree well (Fig. 1). Different layouts and gate pitches were investigated to optimize the trade-off between maximum operating temperature and the longest signal path, which limits the size of high-frequency devices (Fig. 2. and 3.).
Place, publisher, year, edition, pages
2005. Vol. 2005, 290-291 p.
Electro-thermal simulations, Gallium arsenide power devices, Self-heating phenomena, Thermal modeling, Computer simulation, Degradation, Electric fields, Semiconducting gallium arsenide, Semiconductor devices, Semiconductor junctions, Signal processing, Silicon carbide, Thermal conductivity, Thermoanalysis, MESFET devices
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85438ScopusID: 2-s2.0-33847186645ISBN: 1424400848ISBN: 9781424400843OAI: oai:DiVA.org:kth-85438DiVA: diva2:499791
2005 International Semiconductor Device Research Symposium. Bethesda, MD. 7 December 2005 - 9 December 2005
QC 201203022012-02-132012-02-132012-03-02Bibliographically approved