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SiC bipolar power transistors: Design and technology issues for ultimate performance
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
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2010 (English)In: 2010 MRS Spring Meeting, 2010, Vol. 1246, 175-186 p.Conference paper (Refereed)
Abstract [en]

Silicon carbide (SiC) semiconductor devices for high power are becoming more mature and are now commercially available as discrete devices. Schottky diodes have been on the market since a few years but also bipolar junction transistors (BJTs), JFETs and MOSFETs are now reaching the market. The interest is rapidly growing for these devices in high power and high temperature applications. The BJTs have low conduction losses, fast switching capability, operate in normally-off mode, have high radiation hardness, and can handle high power density.

This paper will review the current state of the art in active switching device performance with special emphasis on BJTs. Device performance has been demonstrated over a wide temperature interval. A very important feature in high power switch applications is the low on-resistance of a device. Better material quality and epi processes suppress the amount of basal plane dislocations to avoid stacking fault formation generated during high current injection. This has long been a concern for bipolar SiC devices but several research reports and long term reliability measurements of pn-junctions show that the bipolar degradation problem can be solved by a fine-tuned epitaxial technique. A discussion on surface passivation control is included. Finally, an example of a power switching module is given also demonstrating the excellent paralleling capability of BJTs.

Place, publisher, year, edition, pages
2010. Vol. 1246, 175-186 p.
, Materials Research Society Symposium Proceedings, ISSN 0272-9172 ; 1246
Keyword [en]
Basal plane dislocations, Bipolar junction transistor, Conduction loss, Design and technology, Device performance, Discrete devices, Epitaxial techniques, Fast switching, High currents, High power density, High power switch, High-power, Long term, Material quality, MOSFETs, Off mode, On-resistance, P-n junction, Power switching modules, Power transistors, Radiation hardness, Reliability measurements, Research reports, Schottky diodes, SiC devices, State of the art, Surface passivation, Switching devices, Temperature intervals, Bipolar transistors, Equipment, High temperature applications, MOSFET devices, Passivation, Power electronics, Schottky barrier diodes, Semiconducting silicon, Semiconductor device manufacture, Semiconductor junctions, Silicon carbide, Switching circuits, Tunnel diodes, Semiconducting silicon compounds
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-85440DOI: 10.1557/PROC-1246-B08-01ISI: 000305896100024ScopusID: 2-s2.0-78650338212ISBN: 978-160511223-7OAI: diva2:499796
2010 MRS Spring Meeting. San Francisco, CA. 5 April 2010 - 9 April 2010

QC 20120214

Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2013-06-11Bibliographically approved

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Östling, MikaelDomeij, MartinGhandi, RezaBuono, BenedottoHallen, AndersZetterling, Carl-Mikael
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