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Extrinsic base design of SiC bipolar transistors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0001-8108-2631
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.ORCID iD: 0000-0002-5845-3032
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2004 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 457-460, no II, 1117-1120 p.Article in journal (Refereed) Published
Abstract [en]

The SiC npn bipolar junction transistor (BJT) is a very promising device for high voltage and high power switches. The SiC BJT has, due to junction voltage cancellation, potentially a low on-resistance. However, the high resistivity in the base layer can induce a locally forward biased base collector junction and a premature current from the base to collector at on-state. In this work we propose a new technique to fabricate the extrinsic base using regrowth of the extrinsic base layer. This technique can put the highly doped region of the extrinsic base a few tenths of a micron from the intrinsic region. We also propose a new mobility model in our simulations to correctly account for the ionized impurities in minority carrier transport and elevated temperature.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2004. Vol. 457-460, no II, 1117-1120 p.
Keyword [en]
Bipolar transistors, Mobility, Regrowth, Collector junctions, Junction voltage, Premature current, Charge carriers, Concentration (process), Electric conductivity, Electric potential, Electric resistance, Electron mobility, Ionization, Product design, Silicon carbide, Temperature control
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85435ISI: 000222802200266OAI: oai:DiVA.org:kth-85435DiVA: diva2:499811
Note
Sponsors: Centre National de la Recherche Scientifique; Institut National Polytechnique de Grenoble; Universite Claude Bernard Lyon; Institut National des Sciences; Conseil General du Rhone. 10th International Conferece on Silicon Carbide and Related Materials 2003 (ICSCRM 2003). QC 20120306Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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