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2.8 kV, forward drop JBS diode with low leakage
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2000 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-342, 1179-1182 p.Article in journal (Refereed) Published
Abstract [en]

High voltage Schottky-, Junction Barrier Schottky (JBS)- and PiN-diodes with an implanted JTE termination have been fabricated on the same 4H-SiC wafer. Blocking voltages of 2.5-2.8 kV were reached for JBS and PiN diodes while the Schottky diodes reach about 2.0 kV. It is shown that the JBS design increases the blocking voltage effectively compared to the Schottky device with less than 10% increase in on-state static losses. Also, a comparison of static losses to a PiN diode gives a decrease of 40% for the JBS. The leakage current is also lowered by two decades compared to the Schottky device at its blocking voltage. Temperature measurements show that the low leakage current is maintained up to at least 225 °C.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. Vol. 338-342, 1179-1182 p.
Keyword [en]
Electric losses, Electric rectifiers, Leakage currents, Schottky barrier diodes, Semiconducting silicon compounds, Temperature measurement, Junction barrier Schottky (JBS) diodes, Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85420OAI: oai:DiVA.org:kth-85420DiVA: diva2:499826
Note
Sponsors: NASA Glenn Research Center; Air Force Research Laboratory; Office Naval Research; Director of Defence Research and Engineering NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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