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Dry etching and metallization schemes in a GaN/SiC heterojunction device process
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2000 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-342, 1049-1052 p.Article in journal (Refereed) Published
Abstract [en]

Dry etching and metallization schemes are described for a GaN/SiC heterojunction. GaN was reactive ion etched in a chlorine based chemistry (Cl2/Ar), and an ICP etch was used on 4H-SiC using a fluorine based chemistry (SF6/Ar/O2). The etch rates obtained on GaN was above 400 nm/min. High sample temperature from self heating and large dc-bias was the probable cause for the high etch rate. The ICP etch rate on SiC approached 320 nm/min, and the etch selectivity to GaN was >100. The metallization was based on Ti for both n-GaN and p-SiC. TLM and Kelvin structures were used to extract the specific contact resistivity, ρC. After a 950 °C anneal in N2 ρC on the GaN samples were below 1·10-6 Ωcm2 for sputtered contacts in room temperature, and an order of magnitude higher with evaporation. On p-SiC no ohmic behavior was found with a doping of 4·1018 cm-3, but the same contact metallization on highly doped areas (>1020 cm-3) showed ohmic behavior with ρC below 10-4 Ωcm2.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. Vol. 338-342, 1049-1052 p.
Keyword [en]
Chlorine, Dry etching, Electric contacts, Fluorine, Metallizing, Nitrides, Plasma etching, Reactive ion etching, Semiconducting gallium compounds, Semiconducting silicon compounds, Silicon carbide, Sputter deposition, Etch selectivity, Gallium nitride, Heterojunctions
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85421OAI: oai:DiVA.org:kth-85421DiVA: diva2:499839
Note
Sponsors: NASA Glenn Research Center; Air Force Research Laboratory; Office Naval Research; Director of Defence Research and Engineering NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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