Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
SiC MISFETs with MBE-grown AlN gate dielectric
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
Show others and affiliations
2000 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 338-342, 1315-1318 p.Article in journal (Refereed) Published
Abstract [en]

Metal-Insulator-Semiconductor Field Effect Transistors (MISFETs) with ion implanted source and drain junctions have been made in 6H silicon carbide (SiC). Aluminum nitride (AlN) was used as the insulating gate dielectric, and was grown using molecular beam epitaxy (MBE). Gate controlled transistor operation was shown with an inversion layer mobility of 10-20 cm2/Vs. However, due to relaxation of the AlN film, the gate leakage was excessive, which precluded a thorough investigation of the transistor characteristics. This paper describes the manufacturing process and current voltage characteristics, and an improved process sequence is also proposed.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. Vol. 338-342, 1315-1318 p.
Keyword [en]
Carrier mobility, Current voltage characteristics, Dielectric films, Ion implantation, Leakage currents, Molecular beam epitaxy, Relaxation processes, Semiconducting aluminum compounds, Semiconductor junctions, Silicon carbide, Substrates, Gate dielectrics, Inversion layer mobility, MISFET devices
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85422OAI: oai:DiVA.org:kth-85422DiVA: diva2:499845
Note
Sponsors: NASA Glenn Research Center; Air Force Research Laboratory; Office Naval Research; Director of Defence Research and Engineering NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

Open Access in DiVA

No full text

Other links

http://www.scopus.com/inward/record.url?eid=2-s2.0-0343878029&partnerID=40&md5=4919daa24163dde95cd126d0fa3ef976

Authority records BETA

Zetterling, Carl-Mikael

Search in DiVA

By author/editor
Zetterling, Carl-MikaelÖstling, Mikael
By organisation
Integrated Devices and Circuits
In the same journal
Materials Science Forum
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar

urn-nbn

Altmetric score

urn-nbn
Total: 176 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf