SiC MISFETs with MBE-grown AlN gate dielectric
2000 (English)In: Materials Science Forum, ISSN 0255-5476, Vol. 338-342, 1315-1318 p.Article in journal (Refereed) Published
Metal-Insulator-Semiconductor Field Effect Transistors (MISFETs) with ion implanted source and drain junctions have been made in 6H silicon carbide (SiC). Aluminum nitride (AlN) was used as the insulating gate dielectric, and was grown using molecular beam epitaxy (MBE). Gate controlled transistor operation was shown with an inversion layer mobility of 10-20 cm2/Vs. However, due to relaxation of the AlN film, the gate leakage was excessive, which precluded a thorough investigation of the transistor characteristics. This paper describes the manufacturing process and current voltage characteristics, and an improved process sequence is also proposed.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2000. Vol. 338-342, 1315-1318 p.
Carrier mobility, Current voltage characteristics, Dielectric films, Ion implantation, Leakage currents, Molecular beam epitaxy, Relaxation processes, Semiconducting aluminum compounds, Semiconductor junctions, Silicon carbide, Substrates, Gate dielectrics, Inversion layer mobility, MISFET devices
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-85422OAI: oai:DiVA.org:kth-85422DiVA: diva2:499845
Sponsors: NASA Glenn Research Center; Air Force Research Laboratory; Office Naval Research; Director of Defence Research and Engineering NR 201408052012-02-132012-02-132012-02-13Bibliographically approved