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UV-ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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1999 (English)In: Materials Science in Semiconductor Processing, ISSN 1369-8001, E-ISSN 1873-4081, Vol. 2, no 1, 23-27 p.Article in journal (Refereed) Published
Abstract [en]

MOS capacitors using wet thermal oxidation of p-type 4H and 6H silicon carbide have been investigated using capacitance-voltage (CV) measurements. The interface state density was determined from displacements in the CV curves at room temperature after optical generation of carriers. Forming gas annealing at 400 °C after metallization was found to reduce the amount of deep interface states, and in combination with UV-ozone precleaning of the SiC substrates in a commercial system, the fixed oxide charge was also reduced.

Place, publisher, year, edition, pages
1999. Vol. 2, no 1, 23-27 p.
Keyword [en]
Annealing, Capacitance measurement, Charge carriers, Interfaces (materials), Silicon carbide, Thermooxidation, Ultraviolet radiation, Voltage measurement, Ultraviolet ozone precleaning, Semiconducting silicon compounds
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85416DOI: 10.1016/S1369-8001(98)00048-1OAI: oai:DiVA.org:kth-85416DiVA: diva2:499856
Note
References: Davis, R.F., Kelner, G., Shur, M., Palmour, J.W., Edmond, J.A., (1991) Proc IEEE, 79 (5), p. 677; Ivanov, P.A., Chelnokov, V.E., (1992) Semicond Sci Technol, 7, p. 863; Baliga, B.J., (1989) IEEE Electron Dev Lett, 10 (10), p. 455; Zheng, Z., Tressler, R.E., Spear, K.E., (1990) J Electrochem Soc, 137 (9), p. 2812; Friedrichs, P., Burte, E.P., Schörner, R., (1994) Appl Phys Lett, 65 (13), p. 1665; Alok, D., McLarty, P.K., Baliga, B.J., (1994) Appl Phys Lett, 65 (17), p. 2177; Zetterling, C.-M., Östling, M., (1994) Phys Scripta, 54, p. 291; Shenoy, J.N., Lipkin, L.A., Chindalore, G.L., Pan, J., Cooper J.A., Jr., Palmour, J.W., Melloch, M.R., (1994) Paper Presented at the 21st Intnational Symposium on Compound Semiconductors, , San Diego, unpublished; Zetterling, C.-M., Östling, M., (1993) Inst Phys Conf Ser, 137, p. 263; Shenoy, J.N., Chindalore, G.L., Melloch, M.R., Cooper J.A., Jr., Palmour, J.W., Irvine, K.G., (1995) J Elec Mater, 24 (4), p. 303; Stein Von Kamienski, E., Gölz, A., Kurz, H., (1995) Mat Sci Eng B, 29, p. 131; Zetterling, C.-M., Harris, C.I., Östling, M., Afanas'ev, V.V., (1995) Inst Phys Conf Ser, 142, p. 605; Afanas'ev, V.V., Stesmans, A., Bassler, M., Pensl, G., Schulz, M.J., Harris, C.I., (1996) Appl Phys Lett, 68 (15), p. 2141; Wood, P.C., Wydeven, T., Tsuji, O., (1993) Mat Res Soc Symp Proc, 315, p. 237; Jenq, C-S., (1978) High-field Generation of Interface States and Electron Traps in MOS Capacitors, , Ph.D. thesis, Princeton University; Sze, S.M., (1981) Physics of Semiconductor Devices, 2nd Ed., , New York: Wiley-Interscience; Solomon, P.M., Dimaria, D.J., (1981) J Appl Phys, 52 (9), p. 5867; Goetzberger, A., Irvin, J.C., (1968) IEEE Trans Electron Devices, 15 (12), p. 1009; Shockley, W., Read, W.T., (1952) Phys Rev, 87, p. 835; Ouisse, T., Bécourt, N., Jaussaud, C., Templier, F., (1994) J Appl Phys, 75 (1), p. 604 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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