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Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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1999 (English)In: Materials Science & Engineering: B. Solid-state Materials for Advanced Technology, ISSN 0921-5107, E-ISSN 1873-4944, Vol. 61-62, 320-324 p.Article in journal (Refereed) Published
Abstract [en]

Heterojunctions on SiC is an area in rapid development, especially GaN/SiC and AlGaN/SiC heterojunctions. The heterojunction can improve the performance considerably for BJTs and FETs. In this work heterojunction diodes have been manufactured and characterized. The structure was a GaN or AlGaN n-type region on top of a 6H-SiC p-type substrate. Two different approaches of growing the n-type region were tested. The GaN was grown with the MBE technique using a polycrystalline GaN buffer, whereas the AlGaN was grown with CVD and an AlN buffer. The AlGaN had an aluminum mole fraction of around 0.1. Mesa structures were formed using Cl2 RIE of GaN/AlGaN, which showed good selectivity on 6H-SiC (about 1:6). A Ti metallization with subsequent RTA was used as contact to GaN and AlGaN, and the contact to 6H-SiC was liquid InGa. Both I-V and C-V measurements were performed on the heterojunction diode. The ideality factor of the diodes, doping concentration of the SiC, and the band alignment of the heterojunction were extracted. © 1999 Elsevier Science S.A.

Place, publisher, year, edition, pages
1999. Vol. 61-62, 320-324 p.
Keyword [en]
Chemical vapor deposition, Current voltage characteristics, Metallizing, Molecular beam epitaxy, Polycrystalline materials, Rapid thermal annealing, Reactive ion etching, Semiconducting aluminum compounds, Semiconducting gallium compounds, Semiconductor device structures, Semiconductor diodes, Silicon carbide, Aluminum gallium nitride, Gallium nitride, Heterojunctions
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85417OAI: oai:DiVA.org:kth-85417DiVA: diva2:499863
Note
References: Ping, A.T., Chen, Q., Yang, J.W., Khan, M.A., Adesida, I., (1997) Proceedings of the IEDM, Washington DC, pp. 561-564; Pankove, J.I., Leksono, M., Chang, S.S., Walker, C., Zeghbroeck, B.V., (1996) MIJ-NSR, 1 Http://nsr.mihj.org/1/39/complete.html (Article 39); Gaska, R., Yang, J., Osinsky, A., Khan, M.A., Shur, M.S., (1997) Proceedings of the IEDM, Washington DC, pp. 565-568; Binari, S.C., Redwing, J.M., Kelner, G., Kruppa, W., (1997) Electron. Lett., 33, pp. 242-243; Strite, S.C., (1994) Group III Nitrides, EMIS Data Reviews No. 11, , London: INSPEC; Kim, W., Botchkarev, A.E., Salvador, A., Popovici, G., Tang, H., Morkoç, H., (1997) J. Appl. Phys., 82, pp. 219-226; Seifert, W., Franzheld, R., Buttler, E., Sobotta, H., Riede, V., (1983) Crystal Res. Technol., 18, p. 383; Yoshida, S., Misawa, S., Gonda, S., (1982) J. Appl. Phys., 53, pp. 6844-6848; Lin, C.F., Chi, G.C., Feng, M.S., Guo, J.D., Tsang, J.S., Hong, J.M., (1996) Appl. Phys. Lett., 68, pp. 3758-3760; Shan, W., Fischer, A.J., Song, J.J., Bulman, G.E., Kong, H.S., Leonard, M.T., Perry, W.G., Davis, R.F., (1996) Appl. Phys. Lett., 69, pp. 740-742; Strite, S., Morkoç, H., (1992) J. Vac. Sci. Tech. B, 10, pp. 1237-1266; Pearton, S.J., Ren, F., Zolper, J.C., Shul, R.J., (1997) Mat. Res. Soc. Symp. Proc., 482, pp. 961-972; Wu, Y.-F., Jiang, W.-N., Keller, B.P., Keller, S., Kapolnek, D., Denbaars, S.P., Mishra, U.K., Wilson, B., (1997) Solid State Electron., 41, pp. 165-168; Torvik, J.T., Qiu, C.-H., Leksono, M., Pankove, J.I., (1998) Appl. Phys. Lett., 72, pp. 945-947; Forrest, S.R., (1987) Heterojunction Band Discontinuities 1st Edn, , New York: Elsevier; Bakowski, M., Gustavsson, U., Lindefelt, U., (1997) Phys. Stat. Sol. B, 162, pp. 421-440; Danielsson, E., Breitholtz, B., Zetterling, C.-M., Östling, M., (1998) Phys. Scripta, , in press; Webster, R.T., Anwar, A.F.M., (1997) Mat. Res. Soc. Symp. Proc., 482, pp. 929-934 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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