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Study of optical characteristics of damage in oxygen-implanted 6H-SiC
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1999 (English)In: Journal of materials science letters, ISSN 0261-8028, E-ISSN 1573-4811, Vol. 18, no 12, 979-982 p.Article in journal (Refereed) Published
Abstract [en]

Oxygen ions, with an energy of 70 keV, and doses ranging from 5×1013 to 5×1015 cm-2, were implanted into 6H SiC. The damage energies were calculated as 0.93-93 eV/atom with the doses respectively. The dielectric function obtained from spectroscopic ellipsometry were quite sensitive to ion irradiation of the surface, while the first order Raman spectroscopy decreased in intensity with increasing O+ ion dose. The damage behavior characterized by optical measurements was in good agreement with characterization by Rutherford backscattering spectrometry and channeling and atomic force microscopy.

Place, publisher, year, edition, pages
1999. Vol. 18, no 12, 979-982 p.
Keyword [en]
Atomic force microscopy, Carrier concentration, Doping (additives), Energy gap, Ion implantation, Light absorption, Nanostructured materials, Oxidation, Oxygen, Point defects, Radiation damage, Rutherford backscattering spectroscopy, Elastic damage energy, Spectroscopic ellipsometry, Silicon carbide
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85414DOI: 10.1023/A:1006627610829OAI: oai:DiVA.org:kth-85414DiVA: diva2:499882
Note
References: MÌller, G., Krötz, G., Niemann, E., (1994) Sensors and Actuators A, 43, p. 259; Brown, D.M., Downey, E., Grezzo, M., Kretchmer, J., Krishnamrthy, V., Hennessy, W., Michon, G., (1996) Solid State Electronics, 59, p. 1531; Wesch, W., (1996) Beam Interactions with Materials and Atoms, 116, p. 305; Kimoto, T., Nakajima, T., Matsunami, H., Nakata, T., Inoue, M., (1996) Appl. Phys. Lett., 69, p. 1113; Nadella, R.K., Capano, M.A., (1997) Appl. Phys. Lett., 70, p. 886; Alok, D., Baliga, B.J., (1997) J. Electrochem. Soc., 144, p. 1135; Alok, D., Baliga, B.J., (1997) J. Electrochem. Soc., 26, p. 134; Grimaldi, M.G., Calcagno, L., Musumeci, P., Frangis, N., Van Landuyt, J., (1997) J. Appl. Phys., 81, p. 7181; Ninomiya, S., Adachi, S., (1994) Jpn. J. Appl. Phys., 33, p. 2479; Capelletti, R., Miotello, A., Ossi, P.M., (1997) J. Appl. Phys., 81, p. 146; Musumeci, P., Calcagno, L., Grimaldi, M.G., Foti, G., (1996) Appl. Phys. Lett., 69, p. 468; Laine, A.D., Mezzasalma, A.M., Rizzo, S., Mondio, G., (1996) Beam Interactions with Materials and Atoms, 116, p. 338 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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