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Plasma chemistries for high density plasma etching of SiC
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1999 (English)In: Journal of Electronic Materials, ISSN 0361-5235, E-ISSN 1543-186X, Vol. 28, no 3, 196-201 p.Article in journal (Refereed) Published
Abstract [en]

A variety of different plasma chemistries, including SF6, Cl2, ICI, and IBr, have been examined for dry etching of 6H-SiC in high ion density plasma tools (inductively coupled plasma and electron cyclotron resonance). Rates up to 4500 angstroms·min-1 were obtained for SF6 plasmas, while much lower rates (≀800 angstroms·min-1) were achieved with Cl2, ICI, and IBr. The F2-based chemistries have poor selectivity for SiC over photoresist masks (typically 0.4-0.5), but Ni masks are more robust, and allow etch depths ≥10 Όm in the SiC. A micromachining process (sequential etch/deposition steps) designed for Si produces relatively low etch rates (<2,000 angstroms·min-1) for SiC.

Place, publisher, year, edition, pages
Charlottesville, VA, USA, 1999. Vol. 28, no 3, 196-201 p.
Keyword [en]
Chlorine, Electron cyclotron resonance, Fluorine compounds, Iodine compounds, Masks, Micromachining, Photoresists, Plasma density, Plasma etching, Silicon carbide, Inductively coupled plasma, Plasma chemistry, Sulfur hexafluoride, Semiconducting silicon compounds
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85415OAI: oai:DiVA.org:kth-85415DiVA: diva2:499887
Note
References: Casady, J.B., Agarwal, A.K., Rowland, L.B., Seshadri, S., Siegiez, R.R., Mani, S.S., Sheridan, D.C., Brandt, C.D., (1998) Mater. Res. Soc. Symp. Proc., 483, p. 27. , Pittsburgh, PA: Mater. Res. Soc; Agarwal, A.K., Seshadri, S., Rowland, L.B., (1997) IEEE Electron Dev. Lett., 18, p. 592; Palmour, J.W., Edmond, J.A., Kong, H.S., Carter C.H., Jr., (1994) SiC and Related Materials, 137, p. 499. , Bristol, U.K.: Institute of Physics; Baliga, B.J., (1996) Power Semiconductor Devices, , Boston: PWS Publishing; Ueno, K., Asai, R., Tsuji, T., (1998) IEEE Electron Dev. Lett., EDL-19, p. 244; Spitz, J., Melloch, M.R., Cooper J.A., Jr., Capano, M., (1998) IEEE Electron. Dev. Lett., EDL-19, p. 100; Neudeck, P.G., (1995) J. Electron. Mater., 24, p. 283; Shenoy, J.N., Melloch, M.R., Cooper J.A., Jr., (1997) IEEE Electron. Dev. Lett., EDL-18, p. 93; Baliga, B.J., (1996) Inst. Phys. Conf. Ser., 142, p. 1. , Bristol, U.K.: Institute of Physics; Raghunathan, R., Baliga, B.J., (1998) IEEE Electron Dev. Lett., EDL-19, p. 71; Agarwal, A.K., Casady, J.B., Rowland, L.B., Valek, W.F., White, M.H., Brandt, C.D., (1997) IEEE Electron. Dev. Lett., EDL-18, p. 586; Konstantinov, A.O., Ivanov, P.V., Nordell, N., Karlsson, S., Harris, C.I., (1997) IEEE Electron. Dev. Lett., EDL-18, p. 521; Casady, J.B., Johnson, R.W., (1996) Solid-state Electron., 39, p. 1409; Weitzel, C.E., Moore, K.E., (1998) J. Electron. Mater., 27, p. 365; Capano, M.A., Trew, R.J., (1997) MRS Bulletin, 22, p. 19; Shor, J.S., Kurtz, A.D., Grimberg, I., Weiss, B.Z., Osgood, R.M., (1997) J. Appl. Phys., 81, p. 1546; Collins, D.H., Harris, G.L., Wongchotigul, K., Zhang, D., Chen, N., Taylor, C., (1996) Inst. Phys. Conf. Ser., 142, p. 617. , Bristol, U.K.: Institute of Physics; Yih, P.H., Steckl, A.J., (1995) J. Electrochem. Soc., 142, p. 312; Casady, J.B., Luckowski, E.D., Bozack, M., Sheridan, D., Johnson, R.W., Williams, J.H., (1996) J. Electrochem. Soc., 143, p. 750; Steckl, A.J., Yih, P.H., (1992) Appl. Phys. Lett., 60, p. 1966; Casady, J.B., Luckowski, E.D., Bozack, M., Sheridan, D., Johnson, R.W., Williams, J.H., (1996) Inst. Phys. Conf. Ser., 142, p. 625. , Bristol, U.K.: Institute of Physics; Luther, B.P., Ruzyllo, J., Miller, D.L., (1993) Appl. Phys. Lett., 63, p. 171; Lavois, F., Lassagne, P., Locabelli, M.L., (1996) Appl. Phys. Lett., 69, p. 236; Sadiyath, R., Wright, R.L., Chaudry, M.I., Babu, S.V., (1991) Appl. Phys. Lett., 58, p. 1053; Wu, J., Darsons, J.D., Evans, D.R., (1995) J. Electrochem. Soc., 142, p. 669; Cao, L., Li, B., Zhao, J.H., (1997) SiC and Related Compounds Conf. Stockholm, , Sweden; Wang, J.J., Lambers, E.S., Pearton, S.J., Östling, M., Zetterling, C.-M., Grow, J.M., Ren, F., (1998) Solid-state Electron., 42, p. 743; Flemish, J.R., Xie, K., Zhao, J., (1994) Appl. Phys. Lett., 64, p. 2315; Flemish, J.R., Xie, K., Buchwald, W., Casas, L., Zhao, J.H., McLane, G.F., Dubey, M., (1994) Mater. Res. Soc. Sump. Proc., 339, p. 145. , Pittsburgh, PA: Mater. Res. Soc; Flemish, J.R., Xie, K., (1996) J. Electrochem. Soc., 143, p. 2620; Xie, K., Flemish, J.R., Zhao, J.H., Buchwald, W.R., Casas, L., (1995) Appl. Phys. Lett., 67, p. 368; McDaniel, G.F., Lee, J.W., Lambers, E.S., Pearton, S.J., Holloway, P.H., Ren, F., Grow, J.M., Wilson, R.G., (1997) J. Vac. Sci. Technol. A, 14, p. 885; Flemish, J.R., Xie, K., McLane, G.F., (1996) Mater. Res. Soc. Symp. Proc., 421, p. 153. , Pittsburgh, PA: Mater. Res. Soc; Ren, F., Grow, J.M., Bhaskaran, M., Lee, J.W., Vartuli, C.B., Lothian, J.R., Flemish, J.R., (1996) Mater. Res. Soc. Symp. Proc., 421, p. 251. , Pittsburgh, PA: Mater. Res. Soc; Wang, J.J., Lambers, E.S., Pearton, S.J., Östling, M., Zetterling, C.-M., Grow, J.M., Ren, F., Shul, R.J., (1998) J. Vac. Sci. Technol. A, 16, p. 2605 NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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