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ICP etching of SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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1998 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 42, no 12, 2283-2288 p.Article in journal (Refereed) Published
Abstract [en]

A number of different plasma chemistries, including NF3/O2, SF6/O2, SF6/Ar, ICl, IBr, Cl2/ Ar, BCl3/Ar and CH4/H2/Ar, have been investigated for dry etching of 6H and 3C-SiC in an inductively coupled plasma tool. Rates above 2000 Å cm-1 are found with fluorine-based chemistries at high ion currents. Surprisingly, Cl2-based etching does not provide high rates, even though the potential etch products (SiCl4 and CCl4) are volatile. Photoresist masks have poor selectivity over SiC in F2-based plasmas under normal conditions, and ITO or Ni is preferred. © 1998 Published by Elsevier Science Ltd. All rights reserved.

Place, publisher, year, edition, pages
1998. Vol. 42, no 12, 2283-2288 p.
Keyword [en]
Chlorine, Dry etching, Masks, Photoresists, Plasma etching, Silicon carbide, Inductively coupled plasmas (ICP), Semiconducting silicon compounds
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85411OAI: oai:DiVA.org:kth-85411DiVA: diva2:499890
Note
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