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High rate etching of SiC and SiCN in NF3 inductively coupled plasmas
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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1998 (English)In: Solid-State Electronics, ISSN 0038-1101, E-ISSN 1879-2405, Vol. 42, no 5, 743-747 p.Article in journal (Refereed) Published
Abstract [en]

Etch rates of ∌3,500 Å/min for 6H-SiC and ∌7,500 Å/min for SiC0.5N0.5 were obtained in inductively coupled plasmas with NF3-based chemistries. Similar etch rate trends were achieved with both NF3/O2 and NF3/Ar mixtures. The rates were strong functions of plasma composition, ion energy and ion fluxes, and were independent of conductivity type for SiC. Surface root-mean-square (RMS) roughness were 1-2 nm for etched SiC over a wide range of conditions indicating equi-rate removal of the SiFx and CFx etch products, but SiCN surfaces became extremely rough (RMS roughness > 20 nm) for F2-rich plasma conditions. The etched surfaces of SiC were chemically clean and stoichiometric, with small (<0.2 at%) quantities of N2- or F2- containing residues detected. © 1998 Elsevier Science Ltd. All rights reserved.

Place, publisher, year, edition, pages
1998. Vol. 42, no 5, 743-747 p.
Keyword [en]
Etching, Fluorine compounds, Plasma applications, Semiconducting silicon compounds, Silicon carbide, Stoichiometry, Surface roughness, Inductively coupled plasmas (ICP), Surface root-mean-square (RMS) roughness, Semiconductor device manufacture
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-85407OAI: oai:DiVA.org:kth-85407DiVA: diva2:499894
Note
References: Harris, G.L., (1995) Properties of SiC, pp. 131-149. , Inspec, London UK; Flemish, J.R., (1997) Processing of Wide Bandgap Semiconductors, , ed. S. J. Pearton. Noyes Publications, Park Ridge, NJ; Yih, P.H., Steckl, A.J., (1995) J. Electron. Soc., 142, p. 2853; Weitzel, C.E., Palmour, J.W., Carter C.H., Jr., Moore, K., Nordquist, K.J., Allen, S., There, C., Bhatnagar, M., (1996) IEEE Trans Electron. Dev., 43, p. 1732; Casady, J.B., Luckowski, E.D., Bozack, M., Sheridan, D., Johnson, R.W., Williams, J.R., (1996) J. Electron Soc., 143, p. 1750; Yih, P.H., Steckel, A.J., (1995) J. Electron Soc., 142, p. 312; Palmour, J.W., Davis, R.F., Wallett, T.M., Bhasin, K.B., (1986) J. Vac. Sci. Technol. A, 4, p. 590; Steckl, A.J., Yih, P.H., (1992) Appl. Phys. Lett., 60, p. 1966; Luther, B.P., Rozyllo, J., Miller, D.L., (1993) Appl. Phys. Lett., 63, p. 171; Pan, W.S., Steckl, A.J., (1990) J. Electrochem. Soc., 137, p. 212; Padiyath, R., Wright, R.L., Chaudry, M.I., Babu, S.V., (1991) Appl. Phys. Lett., 58, p. 1053; Flemish, J.R., Xie, K., Zhao, J., (1994) Appl. Phys. Lett., 64, p. 2315; Flemish, J.R., Xie, K., Buchwald, W., Casas, L., Zhao, J.H., McLane, G.F., Dubey, M., (1994) Mater. Res. Soc. Symp. Proc., 339, p. 145; McDaniel, G.F., Lee, J.W., Lambers, E.S., Pearton, S.J., Holloway, P.H., Ren, F., Grow, J.M., Wilson, R.G., (1997) J. Vac. Sci. Technol. A, 14, p. 885; Flemish, J.R., Xie, K., (1996) J. Electrochem. Soc., 143, p. 2620; Xie, K., Flemish, J.R., Zhao, J.H., Buchwald, W.R., Casas, L., (1995) Appl. Phys. Lett., 67, p. 368; Casady, J.B., (1997) Processing of Wide Bandgap Semiconductors, , ed. S. J. Pearton. Noyes Publications, Park Ridge, NJ; Casady, J.B., Luckowski, E.D., Bozack, M., Sheridan, D., Johnson, R.W., Williams, J.R., (1996) Inst. Phys. Conf. Ser., 142, p. 625; Ren, F., Grow, J.M., Bhaskaran, M., Lee, J.W., Vartuli, C.B., Lothian, J.R., Flemish, J.R., (1996) Mater. Res. Soc. Symp. Proc., 421, p. 251; Flemish, J.R., Xie, K., McLane, G.F., (1996) Mater. Res. Soc. Symp. Proc., 421, p. 153; Lanois, F., Lassagne, P., Locatelli, M.L., (1996) Appl. Phys. Lett., 69, p. 236; Wu, J., Parsons, J.D., Evans, D.R., (1995) J. Electrochem. Soc., 142, p. 669; Niemann, E., Boos, A., Leidich, D., (1994) Inst. Phys. Conf. Ser., 137, p. 695; Cao, L., Li, B., Zhao, J.H., (1997) SiC and Related Compounds Conf., , Stockholm, Sweden, Sept; Cao, L., Zhao, J.H., IEEE. Electron. Dev. Lett., , in press; Grow, J.H., (1996) Electrochem. Soc. Proc., 96 (2), p. 60. , Pennington, NJ; (1991) Handbook of Chemistry and Physics, 70th Edn., , CRC Press, Boca Raton; Lieberman, M.A., Lichtenburg, A.J., (1994) Principles of Plasma Discharges and Materials Processing, , Wiley and Sons, New York NR 20140805Available from: 2012-02-13 Created: 2012-02-13 Last updated: 2017-12-07Bibliographically approved

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Zetterling, Carl-Mikael

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